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1 TGF2021-04-SD july 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com datasheet subject to change without notice. primary applications product description key features 900 mhz low noise application board performance dc-4 ghz packaged power phemt bias conditions: vd = 5 v, idq = 150 ma, vg = -0.8 v typical ? frequency range: dc-4 ghz ? package dimensions: 4.5 x 4 x 1.5 mm nominal 900 mhz low noise application board performance: ? otoi: 39.5 dbm ? noise figure: 0.6db ? gain: 16db ? p1db: 26dbm ? input return loss: -8 db ? output return loss: -18 db ? bias: vd = 5 v, id = 150 ma, vg = -0.8 v (typical) ? cellular base stations ? wimax ? wireless infrastructure ? low noise amplifiers the TGF2021-04-SD is a high performance pseudomorphic high electron mobility gaas transistor (phemt) housed in a low cost sot89 surface mount package. the device?s ideal operating point for low noise operation is at a drain bias of 5 v and 150 ma. at this bias at 900 mhz when matched into 50 ohms using external components, this device is capable of 16 db gain, 0.6db noise figure, and 39.5 dbm output ip3. the combination of high gain, low noise, and excellent linearity makes this an ideal component for use in a 3g or 4g receive chain. evaluation boards at 900 mhz are available. rohs and lead-free compliant
2 TGF2021-04-SD july 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com table ii recommended low noise operating conditions table i absolute maximum ratings 1/ symbol parameter value notes vd-vg drain to gate voltage 15.0 v vd drain voltage 12.0 v 2/ vg gate voltage range -5 to 0 v id drain current 1800 ma 2/ |ig| gate current range 28 ma tch channel temperature 200 c 1/ pin input continuous wave power 31 dbm 2/ 1/ these ratings represent the maximum operable va lues for this device. stresses beyond those listed under ?absolute maximum ratings? may cause per manent damage to the device and / or affect device lifetime. these are stress ratings only, and functional operation of the device at these conditions is not implied. 2/ combinations of supply voltage, supply current , input power, and output power shall not exceed the maximum power dissipation listed in table iv. symbol parameter 1/ typical value vd drain voltage 5 v idq drain current 150 ma vg gate voltage -0.8 v 1/ see assembly diagram for bias instructions.
3 TGF2021-04-SD july 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com table iii rf characterization table symbol parameter test condi tions nominal units notes gain small signal gain 900 mhz 16 db 1/ irl input return loss 900 mhz -8 db 1/ orl output return loss 900 mhz -18 db 1/ psat saturated output power 900 mhz 27.3 dbm 1/ p1db output power @ 1db compression 900 mhz 26 dbm 1/ toi output toi 900 mhz 39.5 dbm 1/ nf noise figure 900 mhz 0.6 db 1/ bias: vd = 5 v, idq = 150 ma, vg = -0.8 v, typical 1/ using 900 mhz application board.
4 TGF2021-04-SD july 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com table iv power dissipation and thermal properties thermal information parameter test conditions t ch (c) jc (c/w) tm (hrs) jc thermal resistance (channel to backside of package) v d = 4.5 v i d = 150 ma p diss = 0.675 w t base = 85 c 98 19 8e+07 note: heat transfer is conducted through the bottom of the TGF2021-04-SD package into the printed circuit board. thermal resistance of board is application dependent and is not included above.
5 TGF2021-04-SD july 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com device s-parameters (device mounted as shown on page 15) bias conditions vd=5v, ids= 150ma, vg=-0.8v typical freq ghz mag[s11] ang[s11] mag[s21] ang[s21] mag[s12] ang[s12] mag[s22] ang[s22] 0.2 0.932 -123.072 21.427 115.942 0.021 28.395 0.646 -162.037 0.3 0.923 -144 15.412 103.793 0.024 20.995 0.687 -168.797 0.4 0.925 -156.561 11.895 96.265 0.024 17.704 0.712 -173.53 0.5 0.919 -165.822 9.652 90.224 0.025 14.82 0.714 -177.448 0.6 0.921 -173.012 8.124 85.625 0.025 9.321 0.722 179.593 0.7 0.919 -178.888 6.922 81.155 0.027 7.333 0.724 177.605 0.8 0.917 176.252 6.152 76.901 0.026 7.538 0.723 175.297 0.9 0.917 171.831 5.473 74.167 0.027 5.507 0.729 173.971 1 0.91 167.67 4.914 71.157 0.026 5.744 0.728 171.727 1.1 0.913 164.057 4.492 67.99 0.027 2.806 0.729 169.556 1.2 0.91 159.687 4.141 64.777 0.027 3.81 0.731 167.568 1.3 0.911 156.568 3.772 61.779 0.027 2.984 0.729 166.375 1.4 0.911 153.572 3.559 58.565 0.027 1.561 0.728 164.845 1.5 0.909 150.565 3.298 55.316 0.027 1.23 0.731 163.193 1.6 0.909 147.435 3.09 52.976 0.029 1.256 0.73 162.211 1.7 0.908 144.315 2.925 50.204 0.028 -0.611 0.729 160.552 1.8 0.91 140.46 2.782 47.128 0.029 -0.344 0.726 159.282 1.9 0.909 138.172 2.636 44.653 0.029 -1.169 0.73 157.476 2 0.909 135.405 2.493 41.763 0.03 -2.66 0.724 155.587 2.1 0.914 132.151 2.382 39.061 0.03 -4.208 0.732 154.236 2.2 0.901 129.373 2.296 36.38 0.031 -4.136 0.728 152.488 2.3 0.907 126.779 2.208 34.013 0.03 -5.268 0.734 151.519 2.4 0.908 123.836 2.1 31.669 0.032 -6.796 0.729 149.732 2.5 0.904 120.979 2.031 27.603 0.031 -8.985 0.728 148.29 2.6 0.908 118.128 1.97 25.477 0.032 -8.646 0.724 146.869 2.7 0.902 115.242 1.878 23.232 0.033 -8.753 0.717 145.427 2.8 0.899 111.949 1.84 20.16 0.033 -10.664 0.718 144.608 2.9 0.905 109.87 1.772 17.535 0.034 -12.762 0.719 142.216 3 0.904 106.959 1.72 14.591 0.034 -13.733 0.724 140.595 3.1 0.903 104.385 1.657 11.908 0.034 -15.628 0.719 139.267 3.2 0.908 101.359 1.631 9.029 0.035 -16.881 0.727 137.618 3.3 0.903 98.561 1.567 6.636 0.035 -17.376 0.72 135.872 3.4 0.898 95.964 1.516 4.466 0.036 -19.167 0.723 134.591 3.5 0.901 93.255 1.48 1.046 0.036 -20.739 0.72 132.781 3.6 0.902 90.562 1.452 -0.991 0.037 -20.869 0.721 131.451 3.7 0.906 87.974 1.403 -3.95 0.037 -21.813 0.709 130.368 3.8 0.905 84.898 1.378 -6.245 0.038 -23.159 0.716 128.457 3.9 0.9 82.083 1.336 -9.121 0.039 -24.762 0.719 127.044 4 0.897 79.696 1.311 -11.46 0.039 -27.234 0.722 125.654 4.1 0.908 77.169 1.305 -14.814 0.039 -28.915 0.725 123.914 4.2 0.904 74.425 1.265 -16.441 0.039 -29.261 0.717 121.907 4.3 0.901 71.483 1.238 -20.308 0.04 -31.042 0.72 120.176 4.4 0.893 68.717 1.194 -22.153 0.04 -34.044 0.716 118.433 4.5 0.895 66.877 1.2 -25.013 0.041 -35.162 0.714 116.198 4.6 0.9 63.721 1.157 -27.589 0.041 -37.19 0.704 114.38 4.7 0.898 60.691 1.135 -30.031 0.04 -37.632 0.713 112.974 4.8 0.896 57.165 1.119 -32.131 0.041 -38.749 0.721 111.711 4.9 0.89 55.163 1.102 -34.891 0.042 -40.297 0.724 109.731 5 0.892 51.923 1.083 -38.623 0.042 -43.138 0.718 108.428
6 TGF2021-04-SD july 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com gmax and k factor device mounted as shown on page 15 bias conditions: vd = 5 v, idq = 150 ma, vg = -0.8 v typical
7 TGF2021-04-SD july 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com measured data 900 mhz application board bias conditions: vd = 5 v, id = 150 ma, vg = -0.8 v typical gain return loss
8 TGF2021-04-SD july 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com measured data, 900 mhz application board (at 850mhz) bias conditions: v dd = 5v gain, noise figure and otoi vs. ids
9 TGF2021-04-SD july 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com bias conditions: vd = 5 v, idq = 150 ma, vg = -0.8 v typical measured data 900 mhz application board p1db and psat vs. frequency
10 TGF2021-04-SD july 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com bias conditions: vd = 5 v, idq = 150 ma (measured at constant drain cu rrent using active bias circuit) device case temperature = 30 o c above baseplate measured data 900 mhz application board gain and noise figure vs. temperature (at 850mhz) oip3 and p1db vs. temperature (at 850mhz)
11 TGF2021-04-SD july 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com bias procedures 1 2 3 2 bias-up procedure ? vg set to -2.5 v ? vd set to +5 v ? adjust vg more positive until idq is 150 ma. this will be at approximately vg = -0.8 v ? apply rf signal to input bias-down procedure ? turn off rf signal at input ? reduce vg to -2.5v. ensure id ~ 0 ma ? turn vd to 0 v ? turn vg to 0 v pin signal 1 rf in (gate) 2 gnd (source) 3 rf out (drain) electrical schematic
12 TGF2021-04-SD july 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com mechanical drawing a b c d e f g h j j i k 1 2 3 2 3 2 1 dim millimeters min max a 1.40 1.60 b 4.40 4.60 c 2.29 2.60 d 3.94 4.25 e 3.00 center-center f 1.50 center-center g 0.35 0.44 h 0.89 1.20 i 1.02 1.14 j 0.36 0.48 k 1.50 1.83
13 TGF2021-04-SD july 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com evaluation board schematic ? 900 mhz evaluation board layout board dimensions: 33.0 x 25.4mm
14 TGF2021-04-SD july 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com evaluation board bill of materials c1: 4.7pf 0805 avx 08052u4r7cat2a c2: 2.7pf 0805 avx 08052u2r7bat2a c3 27pf 0805 avx 08052u270gat2a c4: 0.47uf 0805 c5: 3.3pf 0805 avx 08052u3r3bat2a c6: 27pf 0805 avx 08052u270gat2a c7: 1.0uf 0805 c8: 27pf 0805 avx 08052u270gat2a r1: 47r 0603 r2: 3r3 0805 l1: 22nh 0805 avx l0805220jestr l2: 22nh 0805 avx l0805220jestr l3: ~0.5nh, realised on board with one source via trl1: transmission line: w=0.75mm, l=15.8mm trl2: transmission line: w=0.75mm, l=16.1mm board material ? fr4, 0.79mm thick
15 TGF2021-04-SD july 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com 1/ the lowest possible thermal and electrical resistance for pin 2 is critical for optimal performance. the array of vias under pin 2 should be as small and as dense as the pc board fabrication permits. 0.30 mm diameter vias on 0.60 mm center to center spacing is recommended. 2/ mounting screws in the vicinity of the package improv e heat transfer to the chassis or to a heat spreader located on the backside of the pc board. shown are clearance holes and solder mask keepout zone for an m2.5 socket head cap screw. use of a split lockwasher and proper torque on the screw will prevent compression damage to the pc board. 3/ use of 1 oz copper (min) in the pc board construction is recommended. 4/ for lowest thermal resistance, solder mask must be removed where the copper traces on the pc board contact the heat spreader. in this example, this would be a) backside of the pc board and b) front of the pc board around package pin 2. gaas fet devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. recommended assembly diagram 2.6 mm ? clearance hole for m2.5 socket head cap screw (2/) 4.6 mm ? soldermask keepout for lockwasher (4/) sot-89 package outline array of vias (1/) 7.6 x 7.6 mm copper area (3/) 1 2 3 assembly notes
16 TGF2021-04-SD july 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com ordering information part package style TGF2021-04-SD sot-89, bulk TGF2021-04-SD-t/r sot-89, tape and reel recommended surface mount package assembly proper esd precautions must be followed while handling packages. clean the board and rinse with alcohol. allow the circuit to fully dry. triquint recommends using solder paste for attachment. follow solder paste and reflow oven vendors? recommendations when developing a solder reflow profile. typical solder reflow profiles are listed in the table below. solder paste can be applied using a stencil printer or dot placement. the volume of solder paste depends on pcb and component layout and should be well cont rolled to ensure consistent mechanical and electrical performance. clean the assembly with alcohol after soldering. typical solder reflow profiles reflow profile snpb pb free ramp-up rate 3 c/sec 3 c/sec activation time and temperature 60 ? 120 sec @ 140 ? 160 c 60 ? 180 sec @ 150 ? 200 c time above melting point 60 ? 150 sec 60 ? 150 sec max peak temperature 240 c 260 c time within 5 c of peak temperature 10 ? 20 sec 10 ? 20 sec ramp-down rate 4 ? 6 c/sec 4 ? 6 c/sec

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